2N5739 Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistors

SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2N5739 2N5740
DESCRIPTION
·With TO-66 package
·Low collector saturation voltage
APPLICATIONS
·For general–purpose switching
and power amplifier applications.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
2N5739
2N5740
VCEO
Collector-emitter voltage
2N5739
2N5740
VEBO
IC
ICM
IB
PC
Tj
Tstg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=100
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
-60
-100
-60
-100
-5
-10
-20
-4
20
150
-65~200
UNIT
V
V
V
A
A
A
W
VALUE
4.56
UNIT
/W