2N5621 Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon PNP Power Transistors

SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors 2N5621 2N5623 2N5625 2N5627
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N5621
2N5623/5625 IC=-50mA ;IB=0
2N5627
VCEsat Collector-emitter saturation voltage IC=-10A; IB=-1A
VBE
Base-emitter on voltage
IC=-5A ; VCE=-5V
ICBO
Collector cut-off current
VCB=Rated VCBO; IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE
DC current gain
2N5621/5625
2N5623/5627
IC=-5A ; VCE=-5V
2N5621/5625
fT
Transition frequency
IC=-1A ; VCE=-12V
2N5623/5627
MIN TYP. MAX UNIT
-60
-80
V
-100
-1.5
V
-1.5
V
-0.1 mA
-0.1 mA
70
200
30
90
40
MHz
30
2