2N5621 Datasheet, PDF (1/3 Pages) Savantic, Inc. – Silicon PNP Power Transistors

SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors 2N5621 2N5623 2N5625 2N5627
DESCRIPTION
·With TO-3 package
·Excellent safe operating area
·Low collector saturation voltage
APPLICATIONS
·For audio and general-purpose
applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
2N5621
VCBO
Collector-base voltage
2N5623/5625 Open emitter
2N5627
2N5621
VCEO
Collector-emitter voltage 2N5623/5625 Open base
2N5627
VEBO
IC
PD
Tj
Tstg
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
-80
-100
-120
-60
-80
-100
-5
-10
100
150
-65~200
UNIT
V
V
V
A
W
VALUE
1.5
UNIT
/W