2N5613 Datasheet, PDF (2/3 Pages) Seme LAB – Bipolar PNP Device

SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2N5613 2N5615 2N5617 2N5619
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2N5613
VCEO(SUS)
Collector-emitter
sustaining voltage
2N5615/5617
IC=-50mA ;IB=0
2N5619
VCEsat Collector-emitter saturation voltage IC=-1A; IB=-0.1A
VBE
Base-emitter on voltage
IC=-2.5A ; VCE=-5V
ICBO
Collector cut-off current
VCB=Rated VCBO; IE=0
ICEO
Collector cut-off current
VCE= Rated VCEO,IB=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
2N5613/5617
hFE
DC current gain
IC=-2.5A ; VCE=-5V
2N5615/5619
fT
Transition
frequency
2N5613/5617
2N5615/5619
IC=-0.5A ; VCE=-10V
MIN TYP. MAX UNIT
-60
-80
V
-100
-0.5
V
-1.5
V
-0.1 mA
-1.0 mA
-0.1 mA
70
200
30
90
70
MHz
60
2