2N5613 Datasheet, PDF (1/3 Pages) Seme LAB – Bipolar PNP Device

SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2N5613 2N5615 2N5617 2N5619
DESCRIPTION
·With TO-3 package
·Excellent safe operating area
·Low collector saturation voltage
APPLICATIONS
·For general-purpose amplifier ;
and switching applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
2N5613
VCBO
Collector-base voltage
2N5615/5617 Open emitter
2N5619
2N5613
VCEO
Collector-emitter voltage 2N5615/5617 Open base
2N5619
VEBO
IC
PD
Tj
Tstg
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
-80
-100
-120
-60
-80
-100
-5
-5
50
150
-65~150
UNIT
V
V
V
A
W
VALUE
1.5
UNIT
/W