2N5606 Datasheet, PDF (2/3 Pages) Seme LAB – Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.

SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors 2N5606 2N5608 2N5610 2N5612
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N5606
2N5608/5610
2N5612
IC=50mA ;IB=0
VCEsat Collector-emitter saturation voltage
IC=1A; IB=0.1A
VBE
Base-emitter on voltage
IC=2.5A ; VCE=5V
ICBO
Collector cut-off current
VCB=Rated VCBO; IE=0
ICEO
Collector cut-off current
VCE= Rated VCEO,IB=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
2N5606/5610
2N5608/5612
IC=2.5A ; VCE=5V
2N5606/5610
fT
Transition frequency
IC=0.5A ; VCE=10V
2N5608/5612
MIN TYP. MAX UNIT
60
80
V
100
0.5
V
1.5
V
0.1
mA
1.0
mA
0.1
mA
70
200
30
90
70
MHz
60
2