2N5606 Datasheet, PDF (1/3 Pages) Seme LAB – Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.

SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors 2N5606 2N5608 2N5610 2N5612
DESCRIPTION
·With TO-66 package
·Excellent safe operating area
·Low collector saturation voltage
APPLICATIONS
·For general-purpose amplifier ;
and switching applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
2N5606
VCBO
Collector-base voltage
2N5608/5610 Open emitter
2N5612
2N5606
VCEO
Collector-emitter voltage 2N5608/5610 Open base
2N5612
VEBO
IC
PD
Tj
Tstg
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
80
100
120
60
80
100
5
5
25
150
-65~150
UNIT
V
V
V
A
W
VALUE
4.37
UNIT
/W