2N5466 Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5466 2N5467
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0
VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4A
VBEsat Base-emitter saturation voltage
IC=2A; IB=0.4A
ICBO
Collector cut-off current
ICEV
Collector cut-off current
IEBO
Emitter cut-off current
VCB=ratedVCBO; IE=0
VCE=ratedVCEO;VBE(off)=1.5V
TC=125
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=4V
hFE-2
DC current gain
IC=2A ; VCE=4V
fT
Trainsistion frequency
IC=1A ; VCE=10V;f=1MHz
MIN TYP. MAX UNIT
400
V
2.0
V
2.0
V
1.0
mA
1.0
5.0
mA
1.0
mA
15
45
8
2.5
MHz
2