2N5466 Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5466 2N5467
DESCRIPTION
·With TO-3 package
·High-voltage capability
·Fast switching speeds
·Low collector saturation voltage
APPLICATIONS
·They are intended for use in off-line power
supplies ,inverter and converter circuits
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
2N5466
2N5467
VCEO
VEBO
Collector-emitter voltage
Emitter-base voltage
IC
Collector current
ICM
Collector current-peak
IB
Base current
PD
Total Power Dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
500
700
400
7
3
5
1
140
150
-65~200
UNIT
V
V
V
A
A
A
W
VALUE
1.48
UNIT
/W