2N5428 Datasheet, PDF (2/4 Pages) Savantic, Inc. – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5428 2N5430
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N5428
2N5430
IC=50mA ; IB=0
VCEsat-1 Collector-emitter saturation voltage IC=2A ;IB=0.2A
VCEsat-2 Collector-emitter saturation voltage IC=7A I;B=0.7A
VBEsat-1 Base-emitter saturation voltage
IC=2A ;IB=0.2A
VBEsat-2
ICEX
ICBO
Base-emitter saturation voltage
IC=7A I;B=0.7A
Collector cut-off current
2N5428
2N5430
VCE=75V;VBE(off)=1.5V
TC=150
VCE=90V;VBE(off)=1.5V
TC=150
Collector cut-off current
VCB=Rated VCBO;IE=0
IEBO
Emitter cut-off current
VEB=6V; IC=0
hFE-1
DC current gain
IC=0.5A ; VCE=2V
hFE-2
DC current gain
IC=2A ; VCE=2V
hFE-3
DC current gain
IC=5A ; VCE=2V
fT
Transition frequency
IC=0.5A ; VCE=10V;f=10MHz
MIN TYP. MAX UNIT
80
V
100
0.7
V
1.2
V
1.2
V
2.0
V
0.1
1.0
mA
0.1
1.0
0.1
mA
0.1
mA
60
60
240
40
20
MHz
2