2N5428 Datasheet, PDF (1/4 Pages) Savantic, Inc. – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5428 2N5430
DESCRIPTION
·With TO-66 package
·Low collector saturation voltage
: V_CE(sat)=1.2V(Max)@I_C=7A
·Excellent safe operating areas
APPLICATIONS
·Designed for switching and wide-band
amplifier applications
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
2N5428
2N5430
VCEO
Collector-emitter voltage
2N5428
2N5430
VEBO
Emitter-base voltage
IC
Collector current
IB
Base current
PD
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction to case
VALUE
80
100
80
100
6
7
1
40
200
-65~200
UNIT
V
V
V
A
A
W
MAX
4.37
UNIT
/W