2N4910 Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N4910 2N4911 2N4912
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N4910
2N4911
IC=0.1A ;IB=0
2N4912
VCEsat
VBEsat
VBE
ICEO
ICEX
ICBO
IEBO
hFE-1
hFE-2
hFE-3
COB
fT
Collector-emitter saturation voltage IC=1A; IB=0.1A
Base-emitter saturation voltage
IC=1A ;IB=0.1A
Base-emitter on voltage
IC=1A ; VCE=1V
Collector
cut-off current
2N4910
2N4911
2N4912
Collector cut-off current
Collector cut-off current
VCE=20V; IB=0
VCE=30V; IB=0
VCE=40V; IB=0
VCE=Rated VCEO; VBE(off)=1.5V
TC=150
VCB=Rated VCBO; IE=0
Emitter cut-off current
VEB=5V; IC=0
DC current gain
IC=50mA ; VCE=1V
DC current gain
IC=500mA ; VCE=1V
DC current gain
IC=1.0A ; VCE=1V
Output capacitance
IE=0;VCB=10V;f=1MHz
Transition frequency
IC=250mA;VCE=10V;f=1MHz
MIN TYP. MAX UNIT
40
60
V
80
0.6
V
1.3
V
1.3
V
0.5 mA
0.1
1.0
mA
0.1 mA
1.0 mA
40
20
100
10
100 pF
3.0
MHz
2