2N4910 Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N4910 2N4911 2N4912
DESCRIPTION
·With TO-66 package
·Low collector saturation voltage
·Excellent safe operating area
·2N4912 complement to type 2N4900
APPLICATIONS
·Designed for driver circuits,switching
and amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
2N4910
VCBO
Collector-base voltage 2N4911
2N4912
2N4910
VCEO
Collector-emitter voltage 2N4911
2N4912
VEBO
IC
IB
PD
Emitter-base voltage
Collector current
Base current
Total Power Dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
40
60
80
40
60
80
5
1.0
1.0
25
150
-65~200
UNIT
V
V
V
A
A
W
VALUE
7.0
UNIT
/W