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LE28CV1001M Datasheet, PDF (6/14 Pages) Sanyo Semicon Device – 1MEG (131072 words x 8 bits) Flash Memory
LE28CV1001M, T-12/15
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Ratings
Supply voltage
Input pin voltage
DQ pin voltage
A9 pin voltage
Allowable power dissipation
VDD
VIN
VOUT
VA9
Pd max
–0.5 to +6.0
–0.5 to VDD + 0.5
–0.5 to VDD + 0.5
–0.5 to +14.0
600
Operating temperature
Topr
0 to +70
Storage temperature
Tstg
–65 to +150
Notes:1. The device may be destroyed by the application of stresses in excess of the absolute maximum ratings.
2. –1.0 V to VDD + 1.0 V for pulses less than 20 ns
3. –1.0 V to +14 V for pulses less than 20 ns
DC Recommended Operating Ranges at Ta = 0 to +70°C
Parameter
Supply voltage
Input low-level voltage
Input high-level voltage
Symbol
min
typ
VDD
3.0
3.3
VIL
VIH
2.0
DC Electrical Characteristics at Ta = 0 to +70°C, VDD = 3.3 V ± 0.3 V
Parameter
Symbol
Conditions
min
Current drain during read
Current drain during write
TTL standby current
CMOS standby current
Input leakage current
Output leakage current
Output low-level voltage
Output high-level voltage
CE = OE = VIL, WE = VIH, all DQ pins open,
ICCR
address inputs = VIH or VIL, operating frequency =
1/tRC (minimum), VDD = VDD max
ICCW
CE = WE = VIL, OE = VIH, VDD = VDD max
ISB1
CE = OE = WE = VIH, VDD = VDD max
ISB2
CE = OE = WE = VDD – 0.3 V,
VDD = VDD max
ILI
VIN = VSS to VDD, VDD = VDD max
ILO
VIN = VSS to VDD, VDD = VDD max
VOL
IOL = 2.1 mA, VDD = VDD min
VOH
IOH = –400 µA, VDD = VDD min
2.4
Input/Output Pin Capacitances at Ta = 25°C, VDD = 3.3 V ± 0.3 V, f = 1 MHz
Parameter
Input/output capacitance
Input capacitance
Symbol
CDQ
CIN
VDQ = 0 V
VIN = 0 V
Conditions
Power on Timing
Parameter
Time from power on until first read operation
Time from power on until first write operation
Symbol
tPU-READ
tPU-WRITE
Conditions
Unit
Note
V
1
V
1, 2
V
1, 2
V
1, 3
mW
1, 4
°C
1
°C
1
max
Unit
3.6
V
0.6
V
V
typ
max
Unit
12
mA
15
mA
1
mA
20
µA
10
µA
10
µA
0.4
V
V
max
Unit
12
pF
6
pF
max
Unit
100
µs
5
ms
No. 5409-6/14