LE28CV1001M Datasheet, PDF (1/14 Pages) Sanyo Semicon Device – 1MEG (131072 words x 8 bits) Flash Memory

Ordering number : EN*5409
CMOS LSI
LE28CV1001M, T-12/15
1MEG (131072 words × 8 bits) Flash Memory
Overview
The LE28CV1001M, T Series ICs are 1 MEG flash
memory products that feature a 131072-word × 8-bit
organization and 3.3 V single-voltage power supply
operation. CMOS peripheral circuits are adopted for high
speed, low power, and ease of use. A 128-byte page
rewrite function provides rapid data rewriting.
Features
• Highly reliable 2-layer polysilicon CMOS flash
EEPROM process
• Read and write operations using a 5 V single-voltage
power supply
• Fast access time: 120 and 150 ns
• Low power dissipation
— Operating current (read): 12 mA (maximum)
— Standby current: 15 µA (maximum)
• Highly reliable read/write
—Erase/write cycles: 10⁴/10³ cycles
—Data retention time: 10 years
• Address and data latches
• Fast page rewrite operation
— 128 bytes per page
— Byte/page rewrite time: 5 ms (typical)
— Chip rewrite time: 5 s (typical)
• Automatic rewriting using internally generated Vpp
• Rewrite complete detection function
— Toggle bit
— Data polling
• Hardware and software data protection functions
• All inputs and outputs are TTL compatible.
• Pin assignment conforms to the JEDEC byte-wide
EEPROM standard.
• Package
SOP 32-pin (525 mil) plastic package:LE28CV1001M
TSOP 32-pin (8 × 20 mm) plastic package:LE28CV1001T
Package Dimensions
unit: mm
3205-SOP32
[LE28CV1001M]
unit: mm
3224-TSOP32
[LE28CV1001T]
SANYO: SOP32
SANYO: TSOP32 (TYPE-I)
These FLASH MEMORY products incorporate technology licensed Silicon Storage Technology, Inc.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
93096HA (OT) No. 5409-1/14