CPH5871 Datasheet, PDF (4/5 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

CPH5871
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0
1000
7
5
3
2
IS -- VSD
[MOSFET]
VGS=0V
0.2
0.4
0.6
0.8
1.0
1.2
Diode Forward Voltage, VSD -- V IT14349
Ciss, Coss, Crss -- VDS [MOSFET]
f=1MHz
Ciss
100
7
5
Coss
Crss
3
2
10
0
5
10
15
20
25
30
Drain-to-Source Voltage, VDS -- V IT14351
ASO
[MOSFET]
3
2 _IDP=14A
PW≤10μs
10
7
5
3
2
1.0
7
5
3
2
ID=3.5A
1m1s00^μs
Operation in
is limited by
DC
this area
RDS(on).
operatio1n0(T0am=1s205m_{°Cs )}
0.1
7
5
3 ^Ta=25°C
2 ^{Single pulse}
0.01 ^{When mounted on ceramic substrate (600mm2×0.8mm)1unit}
0.1 ^{2 3 5 7} 1.0
2 3 5 7 ₁₀
23 5
Drain-to-Source Voltage, VDS -- V IT14375
IF -- VF
[SBD]
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Forward Voltage, VF -- V
IT09553
SW Time -- ID [MOSFET]
5
VDD=15V
3
VGS=4.5V
2
100
7
5
td(off)
3
tf
2
td(on)
10
7
tr
5
3
2
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10
Drain Current, ID -- A
IT14350
VGS -- Qg
[MOSFET]
4.5
VDS=15V
4.0
ID=3.5A
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
1
2
3
4
5
6
Total Gate Charge, Qg -- nC
IT14374
PD -- Ta
[MOSFET]
1.0
When mounted on ceramic substrate
0.9
(600mm²Ã—0.8mm) 1unit
0.8
0.6
0.4
0.2
0
0
10000
5
1000
5
100
5
10
5
1.0
5
0.1
5
0.01
5
0.001
5
0.0001
0
20
40
60
80 100 120 140 160
Ambient Temperature, Ta -- °C
IT14376
IR -- VR
[SBD]
Ta=125°C
100°C
75°C
50°C
25°C
0°C
--25^°C
5
10
15
20
25
30
35
Reverse Voltage, VR -- V
IT09554
No. A1401-4/5