CPH5871 Datasheet, PDF (1/5 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

Ordering number : ENA1401
CPH5871
SANYO Semiconductors
DATA SHEET
CPH5871
MOSFET : N-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
General-Purpose Switching Device
Features
Applications
• _{Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package}
facilitating high-density mounting.
• _[MOSFET]
• _{Ultrahigh-speed switching}
• _{1.8V drive}
• _[SBD]
• _{Short reverse recovery time.}
• _{Low forward voltage.}
• _{Halogen free compliance.}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Marking : YZ
Symbol
Conditions
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (600mm²Ã—0.8mm) 1unit
Ratings
Unit
30
V
±12
V
3.5
A
14
A
0.9
W
150
°C
--55 to +125
°C
Continued on next page.
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"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
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12809PE MS IM TC-00001794 No. A1401-1/5