CPH5862 Datasheet, PDF (4/5 Pages) Sanyo Semicon Device – MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

CPH5862
100
VDD=10V
7 _VGS=4V
5
SW Time -- ID
3
td(off)
2
tf
10
td(on)
7
5
tr
3
2
[MOSFET]
Ciss, Coss, Crss -- VDS [MOSFET]
1000
f=1MHz
7
5
3
2
Ciss
100
7
5
Coss
3
Crss
2
1.0
0.1
2
4
VDS=10V
ID=2A
3
5 7 _1.0
Drain Current, ID -- A
VGS -- Qg
2
3
5
IT02726
[MOSFET]
3
2
1
0
0
1
2
3
Total Gate Charge, Qg -- nC
IT02728
PD -- Ta
[MOSFET]
1.2
10
0
5
10
15
20
Drain-to-Source Voltage, VDS -- V IT02727
ASO
[MOSFET]
2
10 ^IDP=8A
PW≤10µs
7
5
3
2
ID=2A
1.0
7
5
3
2
Operation in this
DC _{op1e0r0amt1io0snm1sms}
0.1
area is limited by RDS(on).
7
5
3 Ta=25°C
2 Single pulse
0.01 ^{Mounted on a ceramic board (1000mm2✕0.8mm) 1unit}
0.01 ^{2 3 5 7} 0.1 ^{2 3 5 7} 1.0 ^{2 3 5 7} 10 ^{2 3}
Drain-to-Source Voltage, VDS -- V IT11354
1.0
0.9
0.8
0.6
0.4
0.2
0
0
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0
Mounted _{on a ceramic board (1000mm 2✕0.8mm) 1unit}
20
40
60
80 100 120 140 160
Ambient Temperature, Ta -- °C
IT11355
IF -- VF
[SBD]
0.2
0.4
0.6
0.8
1.0
Forward Voltage, VF -- V
ID00383
IR -- VR
[SBD]
5
2
1000
5
2
100
5
2
10
5
Ta=125^°C
100^°C
75^°C
50^°C
2
25^°C
1.0
5
2
0.1
0
5
10
15
20
25
30
35
Reverse Voltage, VR -- V
ID00384
No. A0464-4/5