CPH5862 Datasheet, PDF (3/5 Pages) Sanyo Semicon Device – MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

CPH5862
Switching Time Test Circuit
[MOSFET]
VIN
4V
0V
VDD=10V
VIN
PW=10µs
D.C.≤1%
ID=1A
RL=10Ω
D
VOUT
G
trr Test Circuit
[SBD]
Duty≤10%
50Ω
10µs
100Ω
10Ω
--5V
P.G
50Ω
CPH5862
S
trr
ID -- VDS
[MOSFET]
2.0
1.8
VGS=1.5V
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS -- V IT02720
RDS(on) -- VGS [MOSFET]
300
Ta=25°C
250
200
1.0A
150
ID=0.5A
100
50
0
0 1 2 3 4 5 6 7 8 9 10
Gate-to-Source Voltage, VGS -- V IT02722
10
yfs -- ID
[MOSFET]
VDS=10V
7
5
3
25^°C
2
Ta=
--25^°C
75^°C
1.0
7
5
3
2
0.01 ^{2 3 5 7} 0.1
2 3 5 7 _1.0
Drain Current, ID -- A
23 5
IT02724
3.0
VDS=10V
2.5
ID -- VGS
[MOSFET]
2.0
1.5
1.0
0.5
0
0
0.4
0.8
1.2
1.6
2.0
Gate-to-Source Voltage, VGS -- V IT02721
RDS(on) -- Ta
[MOSFET]
250
200
150
100
VVGGS=S=2.45.V0V, ^{I, DID==0.15.A0A}
50
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT02723
10
IS -- VSD
[MOSFET]
7
VGS=0V
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Diode Forward Voltage, VSD -- V
IT02725
No. A0464-3/5