CPH5855 Datasheet, PDF (4/6 Pages) Sanyo Semicon Device – MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

CPH5855
yfs -- ID
[MOSFET]
10
7
VDS=10V
5
3
25^°C
2
1.0
Ta= ^{--25°C75°C}
7
5
3
2
0.1
0.01 ^{2 3 5 7} 0.1 ^{2 3 5 7} 1.0
Drain Current, ID -- A
SW Time -- ID
5
3
2
VDD=10V
VGS=4V
2 3 5 7 ₁₀
IT12036
[MOSFET]
100
7
5
td(off)
t r _tf
3
2
10
td(on)
7
5
3
2
1.0
0.1
23
4.0
VDS=10V
3.5 ^ID=2.5A
5 7 _1.0
23
Drain Current, ID -- A
VGS -- Qg
5 7 ₁₀
IT12038
[MOSFET]
3.0
2.5
2.0
1.5
1.0
0.5
0
0
0.5
1.0
1.5
2.0
2.5
3.0
Total Gate Charge, Qg -- nC
IT12040
PD -- Ta
[MOSFET]
1.0
0.9
0.8
0.6
0.4
0.2
Mounted _{on a ceramic board (600mm 2✕0.8mm) 1unit}
0
0
20
40
60
80 100 120 140 160
Ambient Temperature, Ta -- °C
IT12042
10
7
5
VGS=0V
3
2
IS -- VSD
[MOSFET]
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.001
0
1000
7
0.2
0.4
0.6
0.8
1.0
1.2
Diode Forward Voltage, VSD -- V IT12037
Ciss, Coss, Crss -- VDS [MOSFET]
f=1MHz
5
3
Ciss
2
100
7
Coss
5
Crss
3
2
10
0 2 4 6 8 10 12 14 16 18 20
Drain-to-Source Voltage, VDS -- V IT12039
ASO
[MOSFET]
2
IDP=10A
10
7
5
3 ^ID=2.5A
2
1.0
7
5
3
2
≤10µs
DC _{operatio1n00(mTa1s=02m5s°}^{1Cm)1s00µs}
0.1
Operation in this
7
area is limited by RDS(on).
5
3 Ta=25°C
2 Single pulse
0.01 ^{Mounted on a ceramic board (600mm2✕0.8mm) 1unit}
0.01 ^{2 3 5 7} 0.1 ^{2 3 5 7} 1.0 ^{2 3 5 7} 10 ^{2 3 5}
Drain-to-Source Voltage, VDS -- V IT12041
No. A0670-4/6