CPH5855 Datasheet, PDF (3/6 Pages) Sanyo Semicon Device – MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

CPH5855
Switching Time Test Circuit
[MOSFET]
VIN
4V
0V
VIN
PW=10µs
D.C.≤1%
G
VDD=10V
ID=1.5A
RL=6.67Ω
D
VOUT
CPH5855
P.G
50Ω
S
trr Test Circuit
[SBD]
Duty≤10%
50Ω
100Ω
10Ω
10µs
--5V
trr
ID -- VDS
[MOSFET]
2.5
V GS=1.5V
2.0
1.5
1.0
0.5
0
0
0.1
0.2
0.3
0.4
0.5
Drain-to-Source Voltage, VDS -- V IT12032
RDS(on) -- VGS [MOSFET]
250
Ta=25°C
200
ID=0.5A
150
1.0A
1.5A
100
50
0
0
2
4
6
8
Gate-to-Source Voltage, VGS -- V IT12034
3.0
VDS=10V
2.5
ID -- VGS
[MOSFET]
2.0
1.5
1.0
0.5
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Gate-to-Source Voltage, VGS -- V IT12033
RDS(on) -- Ta [MOSFET]
250
200
150
100
IDI=D0=.15.A0A, ^V, _{VGGS=S1=.28.V5V}
50
ID=1.5A, ^VGS=4.0V
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT12035
No. A0670-3/6