CPH5847 Datasheet, PDF (4/6 Pages) Sanyo Semicon Device – MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

CPH5847
yfs -- ID
[MOSFET]
10
7
VDS=10V
5
3
2
25^°C
1.0
7
5
3
Ta= ^{--25°C75°C}
2
0.1
7
5
3
2
0.01
0.001 ^{2 3 5 70.01 2 3 5 7} 0.1 ^{2 3 5 7} 1.0 ^{2 3 5}
100
7
VDD=10V
VGS=4V
5
Drain Current, ID -- A
SW Time -- ID
IT02905
[MOSFET]
3
td(off)
2
10
tf
7
td(on)
5
3
2
1.0
0.1
2
10
VDS=10V
9 _ID=1.5A
8
3
5 7 _1.0
Drain Current, ID -- A
VGS -- Qg
23
5
IT02907
[MOSFET]
7
6
5
4
3
2
1
0
0
1
2
3
4
5
Total Gate Charge, Qg -- nC
IT07692
PD -- Ta
[MOSFET]
1.0
IS -- VSD
[MOSFET]
10
7
VGS=0V
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0.2
1000
7
5
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Diode Forward Voltage, VSD -- V IT02906
Ciss, Coss, Crss -- VDS [MOSFET]
f=1MHz
3
2
Ciss
100
7
5
3
Coss
2
Crss
10
0 2 4 6 8 10 12 14 16 18 20
Drain-to-Source Voltage, VDS -- V IT02908
ASO
[MOSFET]
10
7
IDP=6A
<10µs
5
3
2 ID=1.5A
1.0
7
5
3
2
10ms
DC _operation
0.1
Operation in this
7
5
area is limited by RDS(on).
3 _Ta=25°C
2 _{Single pulse}
0.01 ^{Mounted on a ceramic board (900mm2!0.8mm) 1unit}
0.01 ^{2 3 5 7} 0.1 ^{2 3 5 7} 1.0 ^{2 3 5 7} 10 ^{2 3 5}
Drain-to-Source Voltage, VDS -- V IT09925
0.8
0.6
0.4
0.2
Mounted _{on a ceramic board (900mm 2!0.8mm) 1unit}
0
0
20
40
60
80 100 120 140 160
Ambient Temperature, Ta -- °C
IT09926
No.8689-4/6