CPH5847 Datasheet, PDF (2/6 Pages) Sanyo Semicon Device – MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

CPH5847
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
V(BR)DSS
IDSS
IGSS
VGS(off)
^yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
VR
VF1
VF2
IR
C
trr
ID=1mA, VGS=0V
VDS=20V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=1A
ID=1A, VGS=4V
ID=0.5A, VGS=2.5V
ID=0.1A, VGS=1.8V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=10V, VGS=10V, ID=1.5A
VDS=10V, VGS=10V, ID=1.5A
VDS=10V, VGS=10V, ID=1.5A
IS=1.5A, VGS=0V
IR=500µA
IF=500mA
IF=1A
VR=15V
VR=10V, f=1MHz
IF=IR=100mA, See specified Test Circuit.
Ratings
Unit
min
typ
max
20
0.4
1.7
2.8
160
200
280
100
22
15
6.5
28
19
13
4.5
0.4
0.4
0.83
V
1 µA
±10 µA
1.3
V
S
210 mΩ
280 mΩ
390 mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.2
V
30
V
0.32
0.37
V
0.38
0.43
V
360 µA
27
pF
10 ns
Package Dimensions
unit : mm
7017-005
0.4
0.15
5 43
0.05
1
2
0.95
2.9
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
SANYO : CPH5
Electrical Connection
5
4
3
1
2
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
Top view
No.8689-2/6