CPH5826 Datasheet, PDF (4/5 Pages) Sanyo Semicon Device – MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

CPH5826
SW Time -- ID
[MOSFET]
3
2
VDD=10V
VGS=4V
100
7
tr
5
td(off)
tf
3
2
td(on)
10
7
5
3
2
1.0
0.1
23
4.0
VDS=10V
3.5 ^ID=3A
5 7 _1.0
23
Drain Current, ID -- A
VGS -- Qg
5 7 ₁₀
IT03496
[MOSFET]
3.0
2.5
2.0
1.5
1.0
0.5
0
0
1.0
0.9
0.8
0.6
0.4
0.2
0
0
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0
1 2 3 4 5 6 7 8 9 10
Total Gate Charge, Qg -- nC
IT03498
PD -- Ta
[MOSFET]
Mounted _{on a ceramic board(600mm 2!0.8mm)1unit}
20
40
60
80 100 120 140 160
Ambient Temperature, Ta -- °C
IT06998
IF -- VF
[SBD]
0.2
0.4
0.6
0.8
1.0
Forward Voltage, VF -- V
ID00383
Ciss, Coss, Crss -- VDS [MOSFET]
1000
f=1MHz
7
5
3
Ciss
2
100
7
Coss
5
Crss
3
2
10
0 2 4 6 8 10 12 14 16 18 20
Drain-to-Source Voltage, VDS -- V IT03497
ASO
[MOSFET]
2 _IDP=12A
≤10µs
10
7
5
3
ID=3A
2
1.0
7
5
3
100_µs
10ms _1ms
DC _{op1e0r0amtiosn}
2
Operation in this
0.1
7
area is limited by RDS(on).
5
3 _Ta=25°C
2 _{Single pulse}
0.01 ^{Mounted on a ceramic board(600mm2!0.8mm)1unit}
0.01 ^{2 3 5 7} 0.1 ^{2 3 5 7} 1.0 ^{2 3 5 7} 10 ^{2 3}
Drain-to-Source Voltage, VDS -- V IT06997
IR -- VR
[SBD]
5
2
1000
5
2
100
5
2
10
5
Ta=125^°C
100^°C
75^°C
50^°C
2
25^°C
1.0
5
2
0.1
0
5
10
15
20
25
30
35
Reverse Voltage, VR -- V
ID00384
No.7786-4/5