CPH5826 Datasheet, PDF (3/5 Pages) Sanyo Semicon Device – MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

CPH5826
Switching Time Test Circuit
trr Test Circuit
[MOSFET]
VIN
4V
0V
VIN
PW=10µs
D.C.≤1%
G
VDD=10V
ID=1.5A
RL=6.67Ω
D
VOUT
[SBD]
Duty≤10%
50Ω
10µs
100Ω
10Ω
--5V
P.G
50Ω
CPH5826
S
trr
ID -- VDS
[MOSFET]
3.0
2.5
2.0
1.5
VGS=1.0V
1.0
0.5
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS -- V IT03490
RDS(on) -- VGS [MOSFET]
160
Ta=25°C
140
120
100
1.0A
80
1.5A
60 ^ID=0.5A
40
20
0
0
2
4
6
8
10
Gate-to-Source Voltage, VGS -- V IT03492
yfs -- ID
[MOSFET]
10
7 ^VDS=10V
5
3
2
1.0
25^°C
7
5
3
Ta= ^--25°7C5^°C
2
0.1
7
5
3
2
0.01
0.001 ^{2 3}
5 7 _0.01 2 3 5 7 _0.1 2 3
Drain Current, ID -- A
5 7 _1.0 2 3
IT06996
4.0
VDS=10V
3.5
ID -- VGS
[MOSFET]
3.0
2.5
2.0
1.5
1.0
0.5
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Gate-to-Source Voltage, VGS -- V IT03491
RDS(on) -- Ta
[MOSFET]
140
120
100
80
60
IIDIDD===01.15..0A5AA, _{,V,VVGGGSS=S=1=2.48.5.V0VV}
40
20
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT03493
IF -- VSD
[MOSFET]
10
7
VGS=0
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0.3
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Diode Forward Voltage, VSD -- V IT03495
No.7786-3/5