TIG111BF Datasheet, PDF (3/5 Pages) Sanyo Semicon Device – High Power High Speed Switching Applications

TIG111BF
IC -- VCE
IC -- VCE
50
Tj= --40°C
50
Tj=25°C
40
40
8V
30
30
8V
20
20
10
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Collector-to-Emitter Voltage, VCE -- V IT16401
IC -- VCE
50
Tj=125°C
40
10
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Gate-to-Emitter Threshold Voltage, VGE(off) -- V IT16402
IC -- VGE(off)
50
VCE=10V
40
30
30
8V
20
20
10
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Collector-to-Emitter Voltage, VCE -- V IT16403
VCE -- VGE
5
Tj= --40°C
4
10
0
3
4
5
6
7
8
9
10
Gate-to-Emitter Threshold Voltage, VGE(off) -- V IT16404
VCE -- VGE
5
Tj=25°C
4
3
IC=46A
23A
2
10A
1
0
5
7
9
11
13
15
Gate-to-Emitter Voltage, VGE -- V IT16405
VCE -- VGE
5
Tj=125°C
4
IC=46A
3
23A
2
10A
1
0
5
7
9
11
13
15
Gate-to-Emitter Voltage, VGE -- V IT16407
3
IC=46A
2
23A
10A
1
0
5
7
9
11
13
Gate-to-Emitter Voltage, VGE -- V
toff, td(off), tf -- RG
10000
7 ^VCC=300V
5 VClamp=600V
3 ^L=200μH
2 VGE=15V
IC=10A
1000
7
5
3
t off
t d(off)
2
tf
100
7
5
3
2
15
IT16406
10
1.0
2 3 5 7 ₁₀ 2 3 5 7 ₁₀₀ 2 3 5 7 ₁₀₀₀
Gate Resistance, RG -- Ω
IT16408
No.9017-3/5