TIG111BF Datasheet, PDF (2/5 Pages) Sanyo Semicon Device – High Power High Speed Switching Applications

TIG111BF
Electrical Characteristics at Tj=25°C, Unless otherwise specified
Parameter
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Cutoff Current
Gate-to-Emitter Leakage Current
Gate-to-Emitter Threshold Voltage
Collector-to-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-ON Time
Turn-OFF Delay Time
Fall Time
Turn-OFF Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Symbol
Conditions
V(BR)CES
ICES
IGES
VGE(off)
VCE(sat)1
VCE(sat)2
Cies
Coes
Cres
td(on)
tr
ton
td(off)
tf
toff
Qg
Qgs
Qgd
IC=1mA, VGE=0V
VCE=600V, VGE=0V
VGE=±30V, VCE=0V
VCE=10V, IC=1mA
VGE=15V, IC=10A
VGE=15V, IC=25A
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
VCE=30V, f=1MHz
L=200μH, VGE=15V, IC=10A, VCC=300V,
Rg=30Ω, See specified Test Circuit.
VCE=300V, VGE=15V, IC=10A
Ratings
Unit
min
typ
max
600
V
100 μA
1 mA
±100 nA
4.0
5.0
6.0
V
1.6
2.0
V
1.7
V
2.2
V
1880
pF
30
pF
22
pF
43
ns
25
ns
250
ns
175
ns
115
ns
360
ns
63
nC
12
nC
22
nC
Thermal Characteristics at Ta=25°C, Unless otherwise specified
Parameter
Symbol
Conditions
min
Thermal Resistance (Junction- Case)
Rth(j-c)
Tc=25°C (SANYO’s ideal heat dissipation condition)*3
Thermal Resistance (Junction- at mosphere) Rth(j-a)
Ratings
typ
max
5
62.5
Unit
°C / W
°C / W
Switching Time Test Circuit
L
VGE
15V
0V
RG
TIG111BF
Diode
VCC
VCLAMP=600V
Timing Chart
VGE
0
IC
0 ^VCE
90%
90%
10% 10%
tf
td(off)
toff
10%
90%
10%
10%
tr
td(on)
ton
IT16383
No.9017-2/5