TIG110BF Datasheet, PDF (3/5 Pages) Sanyo Semicon Device – High Power High Speed Switching Applications

TIG110BF
IC -- VCE
100
Tj= --40°C
90
80
70
60
50
40
30
8V
20
10
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Collector-to-Emitter Voltage, VCE -- V IT16384
IC -- VCE
100
Tj=125°C
90
80
10V
70
60
50
40
30
8V
20
10
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Collector-to-Emitter Voltage, VCE -- V IT16386
VCE -- VGE
5
Tj= --40°C
IC -- VCE
100
Tj=25°C
90
80
70
60
50
40
30
8V
20
10
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Collector-to-Emitter Voltage, VCE -- V IT16385
IC -- VGE(off)
100
VCE=10V
90
80
70
60
50
40
30
20
10
0
3
4
5
6
7
8
9
10
11
Gate-to-Emitter Threshold Voltage, VGE(off) -- V IT16387
VCE -- VGE
5
Tj=25°C
4
4
3
IC=54A
2
27A
14A
1
0
5
7
9
11
13
15
Gate-to-Emitter Voltage, VGE -- V IT16388
VCE -- VGE
5
Tj=125°C
4
IC=54A
3
27A
2
14A
1
0
5
7
9
11
13
15
Gate-to-Emitter Voltage, VGE -- V IT16390
3
IC=54A
2
27A
14A
1
0
5
7
9
11
13
Gate-to-Emitter Voltage, VGE -- V
toff, td(off), tf -- RG
10000
7 ^VCC=300V
5 VClamp=600V
3 ^L=200μH
2 VGE=15V
IC=15A
1000
7
5
3
t off
t d(off)
2
tf
100
7
5
3
2
15
IT16389
10
1.0
2 3 5 7 ₁₀ 2 3 5 7 ₁₀₀ 2 3 5 7 ₁₀₀₀
Gate Resistance, RG -- Ω
IT16391
No.9013-3/5