TIG110BF Datasheet, PDF (1/5 Pages) Sanyo Semicon Device – High Power High Speed Switching Applications

Ordering number : EN9013A
TIG110BF
SANYO Semiconductors
DATA SHEET
TIG110BF
Features
• _{Low-saturation voltage}
• _{Ultrahigh speed switching}
• _{Enhansment type}
N-Channel Non Punch Through IGBT
High Power High Speed Switching
Applications
Specifications
Absolute Maximum Ratings at Ta=25°C, Unless otherwise specified
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
VCES
VGES
600
V
±30
V
ICc*1
Limited by Tjmax
27
A
Collector Current (DC)
@Tc=25°C*3
IC*2
Limited by Tjmax
@Tc=100°C*3
14
A
6
A
Collector Current (Pulse)
Allowable Power Dissipation
ICP
Pulse width Limited by Tjmax
PD
Tc=25°C (SANYO’s ideal heat dissipation condition)*3
108
A
2
W
30
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
-55 to +150
°C
Note :*1 Shows chip capability
*2 Collector current is calculated from the following for mula
IC(TC)=
Tjmax - TC
Rth(j-c)×VCE(sat)max.(Tjmax, IC(TC))
*3 SANYO’s condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
Package Dimensions
unit : mm (typ)
7509-005
10.0
3.2
4.5
2.8
Product & Package Information
• Package
: TO-220FI(LS)
• JEITA, JEDEC
: SC-67, SOT-186A, TO-220F
• Minimum Packing Quantity : 100 pcs./bag, 50 pcs./magazine
Marking
Electrical Connection
2
0.9
1.2
0.75
123
2.55
2.55
1.2
0.7
1 : Gate
2 : Collector
3 : Emitter
SANYO : TO-220FI(LS)
TIG110
LOT No.
1
3
http://semicon.sanyo.com/en/network
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