TIG058E8_12 Datasheet, PDF (3/7 Pages) Sanyo Semicon Device – N-Channel IGBT Light-Controlling Flash Applications

TIG058E8
VCE -- VGE
11
Tc= --25°C
10
9
8
7
6
IC=150A
5
130A
4
100A
3
2
1
2
3
4
5
6
Gate-to-Emitter Voltage, VGE -- V IT14283
VCE -- VGE
11
Tc=75°C
10
9
8
7
IC=150A
6
130A
5
100A
4
3
2
1
2
3
4
5
6
Gate-to-Emitter Voltage, VGE -- V IT14285
VGE(off) -- Tc
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
--50
7
5
3
2
1000
7
5
3
2
100
7
2
--25
0
25
50
75 100 125 150
Case Temperature, Tc -- °C
IT14287
SW Time -- ICP
Test circuit Fig.1
tf
td(off)
VGE=4V
VCC=320V
RG=270Ω
CM=150μF
PW=50μs
tr
td(on)
3
5
7
100
2
3
Collector Current (Pulse), ICP -- A IT14289
VCE -- VGE
11
Tc=25°C
10
9
8
7
IC=150A
6
130A
5
100A
4
3
2
1
2
3
4
5
6
Gate-to-Emitter Voltage, VGE -- V IT14284
VCE(sat) -- Tc
12
VGE=4V
11
10
9
8
I C=150A
7
6
130A
5
100A
4
3
2
--50 --25
0
25
50
75 100 125 150
Case Temperature, Tc -- °C
IT14286
Cies, Coes, Cres -- VCE
5
f=1MHz
3
Cies
2
1000
7
5
3
2
100
7
5
Coes
3
2
Cres
10
7
0 2 4 6 8 10 12 14 16 18 20
Collector-to-Emitter Voltage, VCE -- V
SW Time -- RG
7
5 ^{Test circuit Fig.1}
VGE=4V
3 _VCC=320V
2 _ICP=150A
CM=150μF
1000 _PW=50μs
t d(off)
7
tf
IT14288
5
tr
3
2
t _d(on)
100
7
5
3
2
3
5 7 ₁₀₀
2
3
5 7 ₁₀₀₀
Gate Series Resistance, RG -- Ω
IT14290
No. A1381-3/7