TIG058E8_12 Datasheet, PDF (2/7 Pages) Sanyo Semicon Device – N-Channel IGBT Light-Controlling Flash Applications

TIG058E8
Electrical Characteristics at Ta=25°C
Parameter
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Cutoff Current
Gate-to-Emitter Leakage Current
Gate-to-Emitter Threshold Voltage
Collector-to-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
V(BR)CES
ICES
IGES
VGE(off)
VCE(sat)
Cies
Coes
Cres
Conditions
IC=2mA, VGE=0V
VCE=320V, VGE=0V
VGE=±6V, VCE=0V
VCE=10V, IC=1mA
IC=100A, VGE=4V
VCE=10V, f=1MHz
Fig.1 Large Current R Load Switching Circuit
RL
RG
CM +
TIG058E8
4V
0V
100kΩ
VCC
Ratings
Unit
min
typ
max
400
V
10
μA
±10
μA
0.4
0.9
V
4.0
5.6
V
2200
pF
32
pF
24
pF
Note1. Gate Series Resistance RG ≥ 230Ω is recommended for protection purpose at the time of turn OFF. However,
if dv / dt ≤ 400V / μs is satisfied at customer’s actual set evaluation, RG < 230Ω can also be used.
Note2. The collector voltage gradient dv / dt must be smaller than 400V / μs to protect the device when it is turned off.
Ordering Information
Device
TIG058E8-TL-H
Package
ECH8
Shipping
3,000pcs./reel
memo
Pb Free and Halogen Free
200
Tc=25°C
180
160
IC -- VCE
V GE=54..00VV
140
3.0V
120
100
2.5V
80
60
40
20
0
0 1 2 3 4 5 6 7 8 9 10
Collector-to-Emitter Voltage, VCE -- V IT14281
200
VCE=10V
180
160
140
120
100
IC -- VGE
Tc=
--25^°C25°C
75^°C
80
60
40
20
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Gate-to-Emitter Voltage, VGE -- V IT14282
No. A1381-2/7