TIG056BF Datasheet, PDF (3/4 Pages) Sanyo Semicon Device – High Power High Speed Switching Applications

TIG056BF
VCE -- VGE
6
Tc= --25°C
5
VCE -- VGE
6
Tc=25°C
5
4
4
IC=240A
3
3
120A
2
60A
2
IC=240A
120A
60A
1
0
2
4
6
8 10 12 14 16 18 20
Gate-to-Emitter Voltage, VGE -- V IT15778
VCE -- VGE
6
Tc=75°C
5
IC=240A
4
3
120A
2
60A
1
0
2
4
6
8 10 12 14 16 18 20
Gate-to-Emitter Voltage, VGE -- V IT15779
VCE(sat) -- Tc
6
VGE=15V
5
4
IC=240A
3
120A
2
60A
1
0
2
4
6
8 10 12 14 16 18 20
Gate-to-Emitter Voltage, VGE -- V IT15780
VGE(off) -- Tc
6
5
4
3
2
1
0
--50 --25
5
0
25
50
75 100
Case Temperature, Tc -- °C
SW Time -- ICP
125 150
IT15782
3
2
tf
td(off)
100
7
5
td(on)
3
tr
2
Switching test circuit Fig.1
VGE=15V
10
VCC=320V
7
RG=10Ω
10
2
3
5 7 ₁₀₀
2
3
5
Collector Current (Pulse), ICP -- A IT15784
1
0
--50
10000
7
5
3
2
--25
0
25
50
75 100 125 150
Case Temperature, Tc -- °C
IT15781
Cies, Coes, Cres -- VCE
Cies
f=1MHz
1000
7
5
3
2
Coes
100
7
Cres
5
3
0 2 4 6 8 10 12 14 16 18 20
Collector-to-Emitter Voltage, VCE -- V IT15783
SW Time -- RG
2
Switching test circuit Fig.1
VGE=15V
1000 _VCC=320V
7 ICP=240A
5
t _d(off)
tf
3
t _d(on)
2
100
tr
7
5
3
2
0 10 20 30 40 50 60 70 80 90 100 110
Gate Series Resistance, RG -- Ω IT15785
No. A1775-3/4