TIG056BF Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – High Power High Speed Switching Applications

Electrical Characteristics at Ta=25°C
TIG056BF
Parameter
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Cutoff Current
Gate-to-Emitter Leakage Current
Gate-to-Emitter Threshold Voltage
Collector-to-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Symbol
Conditions
V(BR)CES
ICES
IGES
VGE(off)
VCE(sat)
Cies
Coes
Cres
td(on)
tr
td(off)
tf
IC=2mA, VGE=0V
VCE=320V, VGE=0V
VGE=±30V, VCE=0V
VCE=10V, IC=1mA
IC=240A, VGE=15V
VCE=20V, f=1MHz
VCE=320V, IC=240A, VGE=15V, RG=10Ω
Fig1 Large Current R Load Switching Circuit
Ratings
Unit
min
typ
max
400
V
100 μA
±10 μA
2.5
5.0
V
3.6
5.0
V
5500
pF
100
pF
70
pF
46
ns
32
ns
140
ns
270
ns
VGE
RL
RG
CM +
100kΩ
TIG056BF
VCC
300
Tc=25°C
250
200
IC -- VCE
12V _10V
8V
150
100
50
0
0
1
2
3
4
5
6
Collector-to-Emitter Voltage, VCE -- V IT15776
300
VCE=10V
250
IC -- VGE
200
150
100
50
0
0
2
4
6
8
10
12
Gate-to-Emitter Voltage, VGE -- V IT15777
No. A1775-2/4