TIG030TS Datasheet, PDF (3/4 Pages) Sanyo Semicon Device – N-Channel IGBT Light-Controlling Flash Applications

TIG030TS
200
Tc=25°C
180
160
140
IC -- VCE
V GE=4.5V
4.0V
3.0V
120
2.5V
100
80
60
40
20
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Collector-to-Emitter Voltage, VCE -- V IT11955
VCE -- VGE
6.0
Tc= --25°C
5.5
5.0
4.5
4.0
3.5
IC=150A
3.0
130A
2.5
100A
2.0
1.5
1.0
0
1
2
3
4
5
Gate-to-Emitter Voltage, VGE -- V
VCE -- VGE
6.0
Tc=75°C
5.5
6
IT11957
5.0
4.5
4.0
IC=150A
3.5
130A
3.0
100A
2.5
2.0
1.5
1.0
0
1
2
3
4
5
6
Gate-to-Emitter Voltage, VGE -- V IT11959
VGE(off) -- Tc
1.0
VCE=10V
0.9
IC=1mA
0.8
0.7
0.6
0.5
0.4
0.3
0.2
--50 --25
0
25
50
75 100
Case Temperature, Tc -- °C
125 150
IT11961
200
Tc=25°C
180 _VCE=5V
160
IC -- VGE
140
120
100
80
60
40
20
0
0
0.5 1.0 1.5 2.0 2.5 3.0
Gate-to-Emitter Voltage, VGE -- V
VCE -- VGE
6.0
Tc=25°C
5.5
3.5 4.0
IT11956
5.0
4.5
4.0
3.5
IC=150A
130A
3.0
2.5
100A
2.0
1.5
1.0
0
1
2
3
4
5
Gate-to-Emitter Voltage, VGE -- V
VCE(sat) -- Tc
6
VGE=4V
6
IT11958
5
4
I _C=150A
130A
3
100A
2
1
0
--50
10000
7
5
3
2
--25
0
25
50
75 100 125 150
Case Temperature, Tc -- °C
IT11960
Cies, Coes, Cres -- VCE
f=1MHz
Cies
1000
7
5
3
2
100
7
5
3
2
10
0
Coes
Cres
2 4 6 8 10 12 14 16 18 20
Collector-to-Emitter Voltage, VCE -- V IT11962
No. A0637-3/4