TIG030TS Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – N-Channel IGBT Light-Controlling Flash Applications

Continued from preceding page.
Parameter
Gate-to-Emitter Threshold Voltage
Collector-to-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
TIG030TS
Symbol
VGE(off)
VCE(sat)
Cies
Coes
Cres
Conditions
VCE=10V, IC=1mA
IC=150A, VGE=4V
VCE=10V, f=1MHz
VCE=10V, f=1MHz
VCE=10V, f=1MHz
Ratings
Unit
min
typ
max
0.5
1.2
V
3.7
5.4
V
2610
pF
59
pF
36
pF
Package Dimensions
unit : mm (typ)
7006A-007
Electrical Connection
3.0
8
5
0.125
1
4
0.25
0.65
1 : Collector
2 : Collector
3 : Collector
4 : Collector
5 : Emitter
6 : Emitter
7 : Emitter
8 : Gate
SANYO : TSSOP8
8 765
1 234
1 : Collector
2 : Collector
3 : Collector
4 : Collector
5 : Emitter
6 : Emitter
7 : Emitter
8 : Gate
Top view
Large Current R Load Screening Circuit
RL=2.0Ω
RG≥50Ω
+
CM=400µF
TIG030TS
4V
0V
100kΩ
VCC=320V
Note1. Gate Series Resistance RG≥50Ω is recommended for prolection purpose at the time of turn OFF. However,
if dv/dt≤400V/µs is satisfied at customer’s actual set evaluation, RG<50Ω can also be used.
Note2. The collector voltage gradient dv / dt must be smaller than 400V / µs to protect the device when it is turned off.
No. A0637-2/4