LB11697V Datasheet, PDF (3/14 Pages) Sanyo Semicon Device – Monolithic Digital IC Brushless Motor Driver IC

LB11697V
Continued from preceding page.
Parameter
Symbol
TOC pin
Input voltage 1
VTOC1
Input voltage 2
VTOC2
Input voltage 1 low
VTOC1L
Input voltage 2 low
VTOC2L
Input voltage 1 high
VTOC1H
Input voltage 2 high
VTOC2H
HP Pin
Output saturation voltage
VHPL
Output leakage current
IHPleak
CSD Oscillator (CSD pin)
High-level output voltage
Low-level output voltage
External capacitor charge current
V_OH (CSD)
V_OL (CSD)
ICHG1
External capacitor discharge current
ICHG2
Charge/discharge current ratio
RCSD
RD Pin
Low-level output voltage
VRDL
Output leakage current
Current Limiter Circuit (RF pin)
I_L (RD)
Limiter voltage
VRF
Undervoltage Protection Circuit (LVS pin)
Operating voltage
VSDL
Release voltage
VSDH
Hysteresis
∆VSD
PWMIN Pin
Input frequency
f (PI)
High-level input voltage
Low-level input voltage
Input open voltage
Hysteresis
High-level input current
Low-level input current
S/S Pin
V_IH (PI)
V_IL (PI)
V_IO (PI)
V_IS (PI)
I_IH (PI)
I_IL (PI)
High-level input voltage
Low-level input voltage
Hysteresis
High-level input current
Low-level input current
F/R Pin
V_IH (SS)
V_IL (SS)
V_IS (SS)
I_IH (SS)
I_IL (SS)
High-level input voltage
Low-level input voltage
Input open voltage
Hysteresis
High-level input current
Low-level input current
N1 Pin
V_IH (FR)
V_IL (FR)
V_IO (FR)
V_IS (FR)
I_IH (FR)
I_IL (FR)
High-level input voltage
Low-level input voltage
Input open voltage
High-level input current
Low-level input current
N2 Pin
V_IH (N1)
V_IL (N1)
V_IO (N1)
I_IH (N1)
I_IL (N1)
High-level input voltage
Low-level input voltage
Input open voltage
High-level input current
Low-level input current
V_IH (N2)
V_IL (N2)
V_IO (N2)
I_IH (N2)
I_IL (N2)
Conditions
min
Output duty: 100%
2.68
Output duty: 0%
1.2
Design target value*, when VREG = 4.7 V, 100%
2.68
Design target value*, when VREG = 4.7 V, 0%
1.23
Design target value*, when VREG = 5.3 V, 100%
3.02
Design target value*, when VREG = 5.3 V, 0%
1.37
I_O = 10 mA
V_O = 18 V
VCSD = 2 V
VCSD = 2 V
(Charge current)/(discharge current)
2.7
0.7
–3.15
0.1
15
I_O = 10 mA
V_O = 18 V
RF-RFGND
0.225
3.5
3.95
0.3
VPWMIN = VREG
VPWMIN = 0 V
VS/S = VREG
VS/S = 0 V
VF/R = VREG
VF/R = 0 V
VN1 = VREG
VN1 = 0 V
VN2 = VREG
VN2 = 0 V
2.0
0
VREG – 0.5
0.2
–10
–130
2.0
0
0.2
–10
–10
2.0
0
VREG – 0.5
0.2
–10
–130
2.0
0
VREG – 0.5
–10
–130
2.0
0
VREG – 0.5
–10
–130
Ratings
typ
3.0
1.35
2.82
1.29
3.18
1.44
0.2
3.0
1.0
–2.5
0.14
18
0.2
0.25
3.7
4.15
0.45
0.25
0
–90
0.25
0
–1
0.25
0
–90
0
–100
0
–100
Unit
max
3.34
V
1.5
V
2.96
V
1.34
V
3.34
V
1.50
0.5
V
10 µA
3.3
1.3
–1.85
0.18
21
V
V
µA
µA
times
0.5
V
10 µA
0.275
V
3.9
V
4.35
V
0.6
V
50 kHz
VREG
V
1.0
V
VREG
V
0.4
V
+10 µA
µA
VREG
V
1.0
V
0.4
V
+10 µA
µA
VREG
V
1.0
V
VREG
V
0.4
V
+10 µA
µA
VREG
V
1.0
V
VREG
V
+10 µA
µA
VREG
V
1.0
V
VREG
V
+10 µA
µA
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