CPH6444 Datasheet, PDF (3/4 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

CPH6444
RDS(on) -- VGS
170
160
Ta=25°C
150
140 ID=1A
130
2A
120
110
100
90
80
70
60
50
40
30
0
2
4
6
8
10
12
Gate-to-Source Voltage, VGS -- V
⏐yfs⏐ -- ID
7
5 ^VDS=10V
14
16
IT13791
3
2
1.0
7
Ta=
--25^°C
75^°C
25^°C
5
3
2
0.1
7
0.01 ^{2 3 5 7} 0.1
2 3 5 7 _1.0
2 3 5 7 ₁₀
Drain Current, ID -- A
IT13793
SW Time -- ID
7
VDD=30V
5
td(off)
VGS=10V
3
tf
2
RDS(on) -- Ta
160
150
140
130
120
110
100
90
80
70
60
V ^{GVS=G4V.S0=GV4,S.=I5DV10=,} _.1I0DAV=, ^1IAD=2A
50
40
30
20
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT13792
IS -- VSD
10
7
VGS=0V
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0.2
1000
7
5
0.4
0.6
0.8
1.0
Diode Forward Voltage, VSD -- V
Ciss, Coss, Crss -- VDS
1.2
IT13794
f=1MHz
Ciss
3
2
10
td(on)
7
tr
5
3
2
0.1
23
5 7 _1.0
23
10
VDS=30V
Drain Current, ID -- A
VGS -- Qg
9 ID=4.5A
8
7
6
5
4
3
2
1
0
012345678
Total Gate Charge, Qg -- nC
57
IT13795
9 10
IT13797
100
7
5
Coss
Crss
3
2
10
0
10
20
30
40
50
60
Drain-to-Source Voltage, VDS -- V IT13796
ASO
5
3
2
IDP=18A
PW≤10μs
10
7
5
3
2
1.0
7
5
3
2
0.1
ID=4.5A
Operation in
is limited by
DC
this area
RDS(on).
operatio1n0(0Tma1s=02m51s_°^mC1)s00μs
7
5
3 ^Ta=25°C
2 Single pulse
0.01 ^{When mounted on ceramic substrate (900mm2✕0.8mm)}
0.1 ^{2 3 5 7} 1.0 ^{2 3 5 7} 10 ^{2 3 5 7} 100
Drain-to-Source Voltage, VDS -- V IT13798
No. A1243-3/4