CPH6444 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

CPH6444
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=30V, VGS=10V, ID=4.5A
VDS=30V, VGS=10V, ID=4.5A
VDS=30V, VGS=10V, ID=4.5A
IS=4.5A, VGS=0V
Ratings
Unit
min
typ
max
505
pF
57
pF
37
pF
7.3
ns
9.8
ns
40
ns
24
ns
10
nC
1.6
nC
2.1
nC
0.83
1.2
V
Package Dimensions
unit : mm (typ)
7018A-003
2.9
0.15
654
0.05
12
0.95
3
0.4
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : CPH6
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10μs
D.C.≤1%
G
VDD=30V
ID=2A
RL=15Ω
D
VOUT
CPH6444
P.G
50Ω
S
ID -- VDS
4.5
4.0
3.5
3.0
3.0V
2.5
2.0
1.5
1.0
VGS=2.5V
0.5
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS -- V IT13789
6.0
VDS=10V
5.5
ID -- VGS
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Gate-to-Source Voltage, VGS -- V IT13790
No. A1243-2/4