CPH6443 Datasheet, PDF (3/4 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

CPH6443
RDS(on) -- VGS
100
Ta=25°C
90
80 _ID=1.5A
3A
70
60
50
40
30
20
10
0
0
2
4
6
8
10
12
Gate-to-Source Voltage, VGS -- V
| yfs | -- ID
7
5 VDS=10V
3
2
14
16
IT15933
1.0
7
5
Ta= ^{--25°C75°C}
3
2
25^°C
0.1
7
5
3
2
0.01
0.001 ^{2 3}
100
7
5
5 70.01 2 3 5 7 _0.1 2 3 5 7 _1.0
Drain Current, ID -- A
SW Time -- ID
2 3 5 7 ₁₀
IT14975
VDD=20V
VGS=10V
td(off)
3
2
tf
10
tr
td(on)
7
5
3
2
0.1
23
10
VDS=20V
9 _ID=6A
5 7 1.0
23
Drain Current, ID -- A
VGS -- Qg
8
5 7 10
IT14977
7
6
5
4
3
2
1
0
0 1 2 3 4 5 6 7 8 9 10
Total Gate Charge, Qg -- nC
IT14979
RDS(on) -- Ta
100
90
80
70
60
50
VVGGSS==44.0.5VV, ,IDID==1.15.A5A
40
30
VGS=10.0V, ^ID=3A
20
10
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT15934
IS -- VSD
10
7
5
VGS=0V
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.001
0
1000
7
5
0.2
0.4
0.6
0.8
1.0
1.2
Diode Forward Voltage, VSD -- V IT14976
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
3
2
100
Coss
7
5
Crss
3
2
10
0
5
10
15
20
25
30
35
Drain-to-Source Voltage, VDS -- V IT14978
ASO
5
3 ^{IDP=24A (PW≤10μs)}
2
10
7
5
3
2
1.0
7
5
3
2
ID=6A
11m0s0^μ1s0μs
Operation in
is limited by
DC
this area
RDS(on).
operation
10ms
100ms
(Ta=25_°C)
0.1
7
5
3 ^Ta=25°C
2 ^{Single pulse}
0.01 ^{When mounted on ceramic substrate (1200mm2×0.8mm)}
0.1
2 3 5 7 _1.0 2 3 5 7 ₁₀
23 5
Drain-to-Source Voltage, VDS -- V IT15935
No. A1826-3/4