CPH6443 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Electrical Characteristics at Ta=25°C
CPH6443
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=1mA, VGS=0V
VDS=35V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=3A
ID=3A, VGS=10V
ID=1.5A, VGS=4.5V
ID=1.5A, VGS=4V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=20V, VGS=10V, ID=6A
VDS=20V, VGS=10V, ID=6A
VDS=20V, VGS=10V, ID=6A
IS=6A, VGS=0V
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10μs
D.C.≤1%
G
VDD=20V
ID=3A
RL=6.7Ω
D
VOUT
CPH6443
P.G
50Ω
S
Ratings
Unit
min
typ
max
35
V
1
μA
±10
μA
1.2
2.6
V
2.9
S
28
37 mΩ
43
61 mΩ
52
73 mΩ
470
pF
70
pF
35
pF
8
ns
17
ns
32
ns
22
ns
10
nC
2
nC
2
nC
0.84
1.2
V
ID -- VDS
6
3.5V
Ta=25°C
5
4
VGS=3.0V
3
2
1
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS -- V IT14971
6
VDS=10V
5
ID -- VGS
4
3
2
1
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Gate-to-Source Voltage, VGS -- V IT14972
No. A1826-2/4