CPH6434 Datasheet, PDF (3/4 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device

CPH6434
3
2 ^VDS=10V
yfs -- ID
10
7
5
3
2
Ta=
--25^°C
75^°C
25^°C
1.0
7
5
3
2
0.1
0.01 ^{2 3 5 7} 0.1
2 3 5 7 _1.0
2 3 5 7 ₁₀
Drain Current, ID -- A
IT11184
SW Time -- ID
5
VDD=15V
3
VGS=4V
2
100
td(off)
7
tf
5
3
tr
2
td(on)
10
0.1
23
4.0
VDS=10V
3.5 ^ID=6A
5 7 _1.0
23
Drain Current, ID -- A
VGS -- Qg
5 7 ₁₀
IT11186
3.0
2.5
2.0
1.5
1.0
0.5
0
0
1
2
3
4
5
6
7
Total Gate Charge, Qg -- nC
IT11188
PD -- Ta
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
Mounted _{on a ceramic board (900mm 2!0.8mm)}
0.2
0
0
20
40
60
80 100 120 140 160
Ambient Temperature, Ta -- °C
IT11190
10
7 VGS=0V
5
3
2
IS -- VSD
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0
3
2
0.2
0.4
0.6
0.8
1.0
1.2
Diode Forward Voltage, VSD -- V IT11185
Ciss, Coss, Crss -- VDS
f=1MHz
1000
7
5
Ciss
3
2
Coss
100
Crss
7
5
0
5
10
15
20
25
30
Drain-to-Source Voltage, VDS -- V
ASO
5
3 ^IDP=24A
IT11187
≤10µs
2
10
7
5
3
2
1.0
7
5
3
2
ID=6A
Operation in
is limited by
DC
this area
RDS(on).
operation10(0Tma1=0s2m51s_°^mC1s)00µs
0.1
7
5
3 ^Ta=25°C
2 Single pulse
0.01 ^{Mounted on a ceramic board (900mm2!0.8mm)}
0.01 ^{2 3 5 7} 0.1 ^{2 3 5 7} 1.0 ^{2 3 5 7} 10 ^{2 3 5}
Drain-to-Source Voltage, VDS -- V IT11189
No. A0443-3/4