CPH6434 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device

CPH6434
Continued from preceding page.
Parameter
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Qg
Qgs
Qgd
VSD
Conditions
VDS=10V, VGS=4V, ID=6A
VDS=10V, VGS=4V, ID=6A
VDS=10V, VGS=4V, ID=6A
IS=6A, VGS=0V
Ratings
Unit
min
typ
max
7.0
nC
1.8
nC
1.9
nC
0.86
1.2
V
Package Dimensions
unit : mm
7018A-003
2.9
0.15
654
0.05
12
0.95
3
0.4
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : CPH6
Switching Time Test Circuit
VIN
4V
0V
VIN
PW=10µs
D.C.≤1%
G
VDD=15V
ID=3A
RL=5Ω
D
VOUT
CPH6434
P.G
50Ω
S
ID -- VDS
6
5
4
VGS=1.5V
3
2
1
0
0
0.2
0.4
0.6
0.8
1.0
Drain-to-Source Voltage, VDS -- V IT11180
RDS(on) -- VGS
140
Ta=25°C
120
100
ID=0.3A
80
1.5A
3.0A
60
40
20
0
0
2
4
6
10
Gate-to-Source Voltage, VGS -- V IT11241
10
VDS=10V
9
ID -- VGS
8
7
6
5
4
3
2
1
0
0
0.5
1.0
1.5
2.0
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Ta
100
2.5
IT11181
80
60
40
IDIID=D=0=1.33.5A.0A,AV, _{,VGVGSG=SS=1=.284.V5.0VV}
20
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT11183
No. A0443-2/4