CPH6401 Datasheet, PDF (3/4 Pages) Sanyo Semicon Device – Ultrahigh-Speed Switching Applications

CPH6401
R _DS(on) - Ta
140
120
10
7
5
VGS= 0
3
2
I _F - VSD
100
80
60
I DI ^{=D1=A2A,V,VGSG=S2=.54VV}
40
20
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta – ˚C
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.001
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Diode Forward Voltage, VSD – V
0.9 1.0
10000
7
5
3
2
1000
7
5
3
2
100
7
5
3
2
Ciss,Coss,Crss - VDS
f = 1MHz
Ciss
Coss
Crss
10 _VDS=10V
9 ID =4A
8
7
6
5
4
3
2
1
VGS - Q g
10
0
2
4
6
8 10 12 14 16 18 20
Drain-to-Source Voltage, VDS – V
0
0
2
4
6
8
10 12 14 16 18
Total Gate Charge, Qg – nC
1000
7 ^{VDD =10V}
5 ^VGS=4V
3
2
100
7
5
3
2
10
7
5
3
2
SW Time - I D
td(off)
tf
tr
td(on)
1.0
7 _0.1
23
5 7 _1.0
23
5
Drain Current, ID – A
P _D - Ta
2.0
3
2 ^IDP=16A
ASO
100µs
10
7
5
ID=4A
3
2
100ms10ms ^1ms
1.0
7
5
3
DC _operation
2
Operation in this area
0.1
is limited by RDS(on).
7
5
3 Ta=25°C
2 1 Pulse
0.01 ^{Mounted on a ceramic board (900mm2×0.8mm)}
0.01 ^{2 3 5 7} 0.1 ^{2 3 5 7} 1.0 ^{2 3 5 7} 10 ^{2 3}
Drain-to-Source Voltage, VDS – V
1.6
1.2
0.8
0.4
Mounted _{on a ceramic board 900mm 2×0.8mm)}
0
0
20
40
60
80 100 120 140 160
Ambient Temperature, Ta – ˚C
No.6152-3/4