CPH6401 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – Ultrahigh-Speed Switching Applications

CPH6401
Continued from preceding page.
Parameter
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain "Miller" Charge
Diode Forward Voltage
Symbol
Conditions
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS=10V, VGS=10V, ID=4A
VDS=10V, VGS=10V, ID=4A
VDS=10V, VGS=10V, ID=4A
IS=4A, VGS=0
Switching Time Test Circuit
VIN
4V
0V
VIN
PW=10µs
D.C.≤1%
VDD=10V
ID=2A
RL=5Ω
D
VOUT
G
P.G
50Ω
CPH6401
S
Ratings
Unit
min
typ
max
10
ns
50
ns
68
ns
58
ns
18
nC
1
nC
3
nC
0.85
1.2 V
ID - VDS
4.5
8.0V 6.0V
4.0
3.5
3.0
2.5V
2.5
3.0V
4.0V
2.0
VGS=1.5V
1.5
1.0
0.5
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS – V
| ^yfs | - I D
100
7
VDS=10V
5
3
2
10
7
Ta=-25^°C25_°C
5
75^°C
3
2
1.0
7
5
3
2
0.1
0.01 ^{2 3}
5 7 _0.1 2 3 5 7 _1.0
Drain Current, ID – A
23
5 7 ₁₀
8
VDS=10V
ID - VGS
7
6
25^°C
5
4
3
2
1
0
0
0.5
1.0
1.5
2.0
2.5
Gate-to-Source Voltage, VGS – V
RDS(on) - VGS
140
Ta=25°C
120
ID=2A
100
1A
80
60
40
20
0
0
1
2
3
4
5
6
7
8
9 10
Gate-to-Source Voltage, VGS – V
No.6152-2/4