CPH5870 Datasheet, PDF (3/5 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET, Schottky Barrier Diode, General-Purpose Switching Device Applications

CPH5870
Switching Time Test Circuit
[MOSFET]
VIN
4V
0V
VDD=30V
VIN
PW=10μs
D.C.≤1%
ID=1A
RL=30Ω
D
VOUT
G
trr Test Circuit
[SBD]
Duty≤10%
50Ω
10μs
100Ω
10Ω
P.G
50Ω
CPH5870
S
--5V
trr
ID -- VDS
[MOSFET]
2.0
1.8
1.6
1.4
1.2
1.0
VGS=1.5V
0.8
0.6
0.4
0.2
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS -- V IT06812
RDS(on) -- VGS [MOSFET]
500
Ta=25°C
ID=1A
400
300
200
100
0
0
2
4
6
8
10
Gate-to-Source Voltage, VGS -- V IT06814
⏐yfs⏐ -- ID
[MOSFET]
10
7 ^VDS=10V
5
3
2
Ta= ^--25°C
25^°C
1.0
7
75^°C
5
3
2
0.1
0.01
2 3 5 7 _0.1 2 3 5 7 _1.0
Drain Current, ID -- A
23 5
IT06816
4.0
VDS=10V
3.5
ID -- VGS
[MOSFET]
3.0
2.5
2.0
1.5
1.0
0.5
0
0
0.5
1.0
1.5
2.0
2.5
3.0
Gate-to-Source Voltage, VGS -- V IT06813
RDS(on) -- Ta
[MOSFET]
400
350
300
250
200
150
V ^{GVS=G2S.5=V4,.0IVD,=I0D.5=A1A}
100
50
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT10367
IS -- VSD
[MOSFET]
7
5
VGS=0V
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0.2
0.4
0.6
0.8
1.0
1.2
Diode Forward Voltage, VSD -- V IT06817
No. A1161-3/5