CPH5839 Datasheet, PDF (3/6 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

Switching Time Test Circuit
[MOSFET]
VIN
4V
0V
VIN
PW=10µs
D.C.≤1%
G
VDD=10V
ID=1A
RL=10Ω
D
VOUT
CPH5839
P.G
50Ω
S
CPH5839
trr Test Circuit
[SBD]
Duty≤10%
50Ω
100Ω
10Ω
10µs
--5V
trr
ID -- VDS
[MOSFET]
2.0
1.8 _4.0V
1.6 _3.0V
1.4
2.5V
VGS=1.5V
1.2
1.0
0.8
0.6
0.4
0.2
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS -- V IT02687
RDS(on) -- VGS [MOSFET]
300
Ta=25°C
250
200
1.0A
150 ^ID=0.5A
100
50
0
0
1
2
34
5
6
7
8
9 10
Gate-to-Source Voltage, VGS -- V IT02689
3.0
VDS=10V
2.5
ID -- VGS
[MOSFET]
2.0
1.5
1.0
0.5
0
0
0.4
0.8
1.2
1.6
2.0
Gate-to-Source Voltage, VGS -- V IT02688
RDS(on) -- Ta [MOSFET]
250
200
150
ID=0.5A, ^VGS=2.5V
100
ID=1.0A, ^VGS=4.0V
50
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT02690
No.8181-3/6