CPH5839 Datasheet, PDF (2/6 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

CPH5839
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
V(BR)DSS
IDSS
IGSS
VGS(off)
^yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
VR
VF1
VF2
IR
C
trr
Rth(j-a)
ID=1mA, VGS=0
VDS=20V, VGS=0
VGS=±8V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=1A
ID=1A, VGS=4V
ID=0.5A, VGS=2.5V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS=10V, VGS=4V, ID=2A
VDS=10V, VGS=4V, ID=2A
VDS=10V, VGS=4V, ID=2A
IS=2A, VGS=0
IR=1mA
IF=0.5A
IF=1A
VR=15V
VR=10V, f=1MHz, 1 cycle
IF=IR=100mA, See specified Test Circuit.
Mounted on a ceramic board (900mm²Ã—0.8mm)
Ratings
min
typ
20
0.4
2.1
3.5
100
130
190
40
25
9
25
25
18
2.7
0.6
0.6
0.87
30
0.35
0.42
35
110
Unit
max
V
1 µA
±10 µA
1.3
V
S
130 mΩ
180 mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.2
V
V
0.4
V
0.47
V
500 µA
pF
15 ns
°C / W
Package Dimensions
unit : mm
2171
2.9
543
0.15
0.05
1
0.95
2
0.4
0.4
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
SANYO : CPH5
Electrical Connection
5
4
3
1
2
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
Top view
No.8181-2/6