CPH5616 Datasheet, PDF (3/4 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device

CPH5616
ID -- VDS
1.8
1.6
1.4
3.0V
1.2
1.0
0.8
0.6
0.4
VGS=2.5V
0.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Drain-to-Source Voltage, VDS -- V IT07434
RDS(on) -- VGS
400
Ta=25°C
ID=0.9A
350
300
250
200
150
4.0
VDS=10V
3.5
ID -- VGS
3.0
2.5
2.0
1.5
1.0
0.5
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Gate-to-Source Voltage, VGS -- V IT07435
RDS(on) -- Ta
400
350
300
250
200
I
DI=D0=.50A.9,AV,
GS=4V
V ^GS=10V
150
100
100
0 2 4 6 8 10 12 14 16
Gate-to-Source Voltage, VGS -- V
yfs -- ID
7
5 ^VDS=10V
18 20
IT07436
3
2
1.0
7
Ta= ^--25°_7C5^°C 25^°C
5
3
2
0.1
0.01
7
5
3
2
23
5 7 _0.1 2 3 5 7 _1.0
Drain Current, ID -- A
SW Time -- ID
td(off)
tf
23 5
IT07438
10
7
5
3
2
1.0
0.1
td(on)
tr
VDD=30V
VGS=10V
2
3
5 7 _1.0
2
3
5
Drain Current, ID -- A
IT07440
50
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT07437
IS -- VSD
5
VGS=0V
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0.2
5
3
2
0.4
0.6
0.8
1.0
1.2
Diode Forward Voltage, VSD -- V IT07439
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
100
7
5
3
2
10
7
0
Coss
Crss
5
10
15
20
25
30
Drain-to-Source Voltage, VDS -- V IT07441
No.8683-3/4