CPH5616 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device

Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Package Dimensions
unit : mm (typ)
7017A-004
2.9
5 43
1
0.95
2
0.4
CPH5616
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=30V, VGS=10V, ID=1.7A
VDS=30V, VGS=10V, ID=1.7A
VDS=30V, VGS=10V, ID=1.7A
IS=1.7A, VGS=0V
Ratings
Unit
min
typ
max
220
pF
28
pF
20
pF
8
ns
5
ns
27
ns
20
ns
6.4
nC
1.1
nC
1.1
nC
0.84
1.2
V
Electrical Connection
0.15
0.05
1 : Drain1
2 : Drain2
3 : Gate2
4 : Source
5 : Gate1
SANYO : CPH5
5
4
3
12
1 : Drain1
2 : Drain2
3 : Gate2
4 : Source
5 : Gate1
Top view
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10µs
D.C.≤1%
G
VDD=30V
ID=0.9A
RL=33.3Ω
D
VOUT
CPH5616
P.G
50Ω
S
No.8683-2/4