CPH5612 Datasheet, PDF (3/4 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device

CPH5612
RDS(on) -- VGS
1200
1200
Ta=25°C
ID=500mA
1000
1000
RDS(on) -- Ta
800
600
400
200
0
0
2
4
6
8
10
Gate-to-Source Voltage, VGS -- V IT08337
yfs -- ID
7
5
VDS=10V
3
2
25^°C
1.0
7
Ta=
--25^°C
75^°C
5
3
2
0.1
0.01
7
5
3
2
23
5 7 _0.1
23
Drain Current, ID -- A
SW Time -- ID
5 7 _1.0
IT08339
VDD=50V
VGS=4V
100
7
td(off)
5
tf
3
2
td(on)
10
7
5
0.01
23
4
VDS=50V
ID=1A
tr
5 7 _0.1
2 3 5 7 _1.0
Drain Current, ID -- A
VGS -- Qg
23
IT08341
3
2
1
0
0
1
2
3
4
5
Total Gate Charge, Qg -- nC
IT08343
800
600
400
I D=I _{D0.=50A.5, AV,GVSG=2S.=54V.0V}
200
0
--60 --40 --20 0 20 40 60 80 100 120
Ambient Temperature, Ta -- °C
5
3 ^VGS=0
2
IF -- VSD
140 160
IT08338
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.001
0.2
1000
7
5
3
2
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Diode Forward Voltage, VSD -- V IT08340
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
100
7
5
3
2
Coss
10
Crss
7
5
3
0 10 20 30 40 50 60 70 80 90 100
Drain-to-Source Voltage, VDS -- V IT08342
ASO
7
5
<10µs
3 IDP=4A
2
ID=1A
1.0
7
5
3
2
0.1
7
5
1ms ¹⁰⁰_µs
DC _{op1e0ra0tmiosn10ms}
3
2
Operation in this
0.01
7
area is limited by RDS(on).
5
3 ^Ta=25°C
2 ^{Single pulse}
0.001 ^{Mounted on a ceramic board (600mm2!0.8mm) 1unit}
0.01 ^{2 3 5 7} 0.1 ^{2 3 5 7} 1.0 ^{2 3 5 7} 10 ^{2 3 5 7} 100 ²
Drain-to-Source Voltage, VDS -- V IT08344
No.8180-3/4